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TO-220 3A High sensitive Thyristor
TF321M-A, TF341M-A, TF361M-A
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qHigh sensitive Gate trigger Current: IGT=0.1mA max
External Dimensions
(Unit: mm)
16.7max 3.00.2 8.80.2 10.4max
5.0max 2.1max
3.750.1
a b
0.15 1.35
12.0 min
4.0 max
+0.2 0.65 -0.1 0.1 2.5
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
0.1 2.5
0.2 1.7
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG (AV) Tj Tstg
Ratings
TF321M-A TF341M-A TF361M-A 200 200 300 300 400 400 500 500 3.0 4.7 60 2.0 10 5.0 5.0 0.5 - 40 to +110 - 40 to +125 600 600 700 700
Unit
V V V V A A A A V V W W C C
Conditions
Tj= -40 to +125C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=87C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 1.0 1.0 1.4 1 0.1 0.1 1.0 20 30 3.0
Unit
mA mA V V mA V mA V/S S C/W
Conditions
Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=5A VD=6V, RL=10, TC=25C VD=1/2xVDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case
18
TF321M-A, TF341M-A, TF361M-A
vT - iT Characteristics (max)
100 50
ITSM Ratings
80
Initial junction temperature Tj=125C
I TSM
Gate Characteristics
12 10
Surge on-state current ITSM (A)
10 ms
iT (A)
vGF (V)
60
1 cycle
On-state current
10 5
Tj= 12 5C Tj= 25 C
8
PG
Gate voltage
40
6
M
=5 W
4
20
1 0.5 0.3 1.0
2 0 0 1 5 10 50 100 0 1 2 3
2.0
3.0
4.0
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT(AV) - PT(AV) Characteristics
7
50Hz Half-cycle sinewave : Conduction angle
IT(AV) - Tc Ratings
150
Average on-state power PT(AV) (W)
DC
50Hz Half-cycle sinewave : Conduction angle
6
0 180
5 4 3 2 1 0
Case temperature TC (C)
180 150 120 90 60
125
0 180
100
=30
50
25 0 0 1 2 3 4 5
0
1
2
3
4
DC 5
=30
Average on-state current IT(AV) (A)
Average on-state current IT(AV) (A)
Pulse trigger temperature Characteristics vgt (Typical)
50
trigger VGT DC gateat 25C voltage
Pulse trigger temperature Characteristics igt (Typical)
)
vgt
50%
50
trigger IGT DC gateat 25C current
120 150
180
60
90
75
igt tw
)
50%
tw
(
10 5
10 5
vgt ( Gate trigger voltage) at Ta and tw
igt (Gate trigger current ) at Ta and tw
(
1 0.5 1 10 10 2 10 3
1 0.5 1 10 10 2 10 3
Pulse width
tw (s)
Pulse width
tw (s)
VGT temperature Characteristics
(Typical)
1.0 (VD=6V, RL=10)
IGT temperature Characteristics
(Typical)
24 20 (VD=6V, RL=10)
Transient thermal resistance Characteristics (Junction to case)
10
0.8
Gate trigger current IGT (A)
Gate trigger voltage VGT (V)
0.6
Transient thermal resistance
rth (C/W)
1 0.1 1 10
0.4
10
0.2
0 - 40
0
25
50
75
100
125
0 -40
0
25
50
75
100
125
10 2
10 3
10 4
Junction temperature Tj (C)
Junction temperature Tj (C)
t, Time (ms)
19

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